st 03 n 20 n channel enhancement mode mosfet 1.9 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ?200 8 , stanson corp. st 03 n 20 2 0 1 4 . v1 description st 03 n2 0 is the n - channel logic enhancement mode power field effect transistor which is produced using high cell density, dmos trench technology. this high density process is especially tailored to minimize on - state resistance. these devices are particularly suited for low voltage application such as power management and other battery powered circuits where high - side switching . pin configuration sot - 89 - 3l 03 20 : product code a : date code feature ! 200 v/ 2 a, r ds(on) = 85 0 m @v gs = 10v ! super high density cell design for extremely low r ds(on) ! exceptional on - resistance and maximum dc current capability ! sot - 89 package design
st 03 n 20 n channel enhancement mode mosfet 1.9 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ?200 8 , stanson corp. st 03 n 20 2 0 1 4 . v1 absoulte maximum ratings (ta = 25 unless otherwise noted ) parameter symbol typical unit drain - source voltage vdss 200 v gate - source voltage vgss 3 0 v continuous drain current (tj=150 ) ta=25 ta= 10 0 id 1.9 0.8 a pulsed drain current idm 9 a power dissipation ta=25 pd 1.78 w operation junction temperature tj - 55/150 storgae temperature range tstg - 55/150 thermal resistance - junction to ambient r ja 75 /w
st 03 n 20 n channel enhancement mode mosfet 1.9 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ?200 8 , stanson corp. st 03 n 20 2 0 1 4 . v1 electrical characteristics ( ta = 25 unless otherwise noted ) parameter symbol condition min typ max unit static drain - source breakdown voltage v (br)dss v gs =0v,id= 250ua 20 0 v gate threshold voltage v gs(th) v ds =v gs ,id = 2 50ua 3 4 5 v gate leakage current i gss v ds =0v,v gs = 3 0v ?00 na zero gate voltage drain current i dss v ds = 160 v,v gs =0v 1 ua drain - source on - resistance r ds(on) v gs = 10v,i d = 12 a 75 0 85 0 m forward transconductance gfs v ds = 1 0 v,i d = 2 a 3.6 s diode forward voltage v sd i s = 1 a ,v gs = 0v 1 v dynamic total gate charge q g v ds = 160 v,v gs = 10v i d = 1 a 9 nc gate - source charge q gs 4 gate - drain charge q gd 2 input capacitance c iss v ds = 25v ,v g s =0v f =1mhz 26 0 500 pf output capacitance c oss 16 0 300 reverse transfer c apacitance c rss 55 110 turn - on time t d(on) tr v d s = 100 v gen = 10 v , i d = 1 a r g = 25 10 20 ns 35 70 turn - off time t d(off) tf 10 20 28 56
st 03 n 20 n channel enhancement mode mosfet 1.9 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ?200 8 , stanson corp. st 03 n 20 2 0 1 4 . v1 typical chatrcteristics (ta = 25 unless otherwise noted )
st 03 n 20 n channel enhancement mode mosfet 1.9 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ?200 8 , stanson corp. st 03 n 20 2 0 1 4 . v1 typical chatrcteristics (ta = 25 unless otherwise noted )
st 03 n 20 n channel enhancement mode mosfet 1.9 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ?200 8 , stanson corp. st 03 n 20 2 0 1 4 . v1 p ackage outline sot - 89 - 3l
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